BS EN IEC 60749-41:2020
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Semiconductor devices. Mechanical and climatic test methods – Standard reliability testing methods of non-volatile memory devices
Published By | Publication Date | Number of Pages |
BSI | 2020 | 26 |
This Part of IEC 60749 specifies the procedural requirements for performing valid endurance, retention and cross-temperature tests based on a qualification specification. Endurance and retention qualification specifications (for cycle counts, durations, temperatures, and sample sizes) are specified in JESD47 or are developed using knowledge-based methods such as in JESD94.
PDF Catalog
PDF Pages | PDF Title |
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2 | undefined |
5 | Annex ZA(normative)Normative references to international publicationswith their corresponding European publications |
7 | English CONTENTS |
8 | FOREWORD |
10 | INTRODUCTION |
11 | 1 Scope 2 Normative references 3 Terms and definitions |
14 | 4 Apparatus 5 Procedure 5.1 Qualification specifications |
15 | 5.2 Program/erase endurance 5.2.1 Test setup Figure 1 – Schematic flow |
16 | 5.2.2 Data cycling |
19 | 5.2.3 Electrical test verification 5.3 Data retention 5.3.1 Data programming |
20 | 5.3.2 Electrical testing and pattern verification (excluding any EEPROM program/erase testing) 5.3.3 Data retention stress 5.3.4 Electrical testing and pattern verification 5.4 Precautions 5.5 Measurements 5.5.1 Electrical measurements 5.5.2 Required measurements |
21 | 5.5.3 Measurement conditions 6 Failure criteria and calculation 6.1 Failure definition 6.2 Handling of transient failures 6.3 Separation of failures into data errors and device failures |
22 | 6.4 Calculation of UBER 6.4.1 UBER definition calculation 6.4.2 Calculation of UBER in the ideal case |
23 | 6.4.3 Calculation of UBER in other cases 7 Summary |
24 | Annex A (informative)Supplementary test condition Figure A.1 – Endurance-retention testing model Figure A.2 – Test concept of data retention bake as a function of endurance |
25 | Bibliography |