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BS EN IEC 60749-41:2020

$142.49

Semiconductor devices. Mechanical and climatic test methods – Standard reliability testing methods of non-volatile memory devices

Published By Publication Date Number of Pages
BSI 2020 26
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This Part of IEC 60749 specifies the procedural requirements for performing valid endurance, retention and cross-temperature tests based on a qualification specification. Endurance and retention qualification specifications (for cycle counts, durations, temperatures, and sample sizes) are specified in JESD47 or are developed using knowledge-based methods such as in JESD94.

PDF Catalog

PDF Pages PDF Title
2 undefined
5 Annex ZA(normative)Normative references to international publicationswith their corresponding European publications
7 English
CONTENTS
8 FOREWORD
10 INTRODUCTION
11 1 Scope
2 Normative references
3 Terms and definitions
14 4 Apparatus
5 Procedure
5.1 Qualification specifications
15 5.2 Program/erase endurance
5.2.1 Test setup
Figure 1 – Schematic flow
16 5.2.2 Data cycling
19 5.2.3 Electrical test verification
5.3 Data retention
5.3.1 Data programming
20 5.3.2 Electrical testing and pattern verification (excluding any EEPROM program/erase testing)
5.3.3 Data retention stress
5.3.4 Electrical testing and pattern verification
5.4 Precautions
5.5 Measurements
5.5.1 Electrical measurements
5.5.2 Required measurements
21 5.5.3 Measurement conditions
6 Failure criteria and calculation
6.1 Failure definition
6.2 Handling of transient failures
6.3 Separation of failures into data errors and device failures
22 6.4 Calculation of UBER
6.4.1 UBER definition calculation
6.4.2 Calculation of UBER in the ideal case
23 6.4.3 Calculation of UBER in other cases
7 Summary
24 Annex A (informative)Supplementary test condition
Figure A.1 – Endurance-retention testing model
Figure A.2 – Test concept of data retention bake as a function of endurance
25 Bibliography
BS EN IEC 60749-41:2020
$142.49