IEC 63229:2021

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Semiconductor devices – Classification of defects in gallium nitride epitaxial film on silicon carbide substrate

Published By	Publication Date	Number of Pages
IEC	2021-04-07	26

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Categories: 31.080.99 - Other semiconductor devices, IEC

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Description

IEC 63229:2021(E) gives guidelines for the definition and classification of defects in GaN epitaxial film grown on SiC substrate. They are identified and described on the basis of examples, mainly by schematic illustrations, optical microscope images, and transmission electron microscope images for these defects. This document covers only defects in as-grown GaN epitaxial film on SiC substrate and does not include defects caused by subsequent processes.

Additional information

Published Code	IEC
Published By	International Electrotechnical Commission
Publication Date	2021-04-07
Pages Count	26
Language	English
Edition	1.0
File Size	2.8 MB
ICS Codes	31.080.99 - Other semiconductor devices

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IEC 63229:2021

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