{"id":233924,"date":"2024-10-19T15:15:22","date_gmt":"2024-10-19T15:15:22","guid":{"rendered":"https:\/\/pdfstandards.shop\/product\/uncategorized\/bs-iec-63068-12019\/"},"modified":"2024-10-25T09:46:39","modified_gmt":"2024-10-25T09:46:39","slug":"bs-iec-63068-12019","status":"publish","type":"product","link":"https:\/\/pdfstandards.shop\/product\/publishers\/bsi\/bs-iec-63068-12019\/","title":{"rendered":"BS IEC 63068-1:2019"},"content":{"rendered":"

IEC 63068-1:2019(E) gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images.<\/p>\n

PDF Catalog<\/h4>\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
PDF Pages<\/th>\nPDF Title<\/th>\n<\/tr>\n
2<\/td>\nundefined <\/td>\n<\/tr>\n
4<\/td>\nCONTENTS <\/td>\n<\/tr>\n
5<\/td>\nFOREWORD <\/td>\n<\/tr>\n
7<\/td>\nINTRODUCTION <\/td>\n<\/tr>\n
8<\/td>\n1 Scope
2 Normative references
3 Terms and definitions <\/td>\n<\/tr>\n
12<\/td>\n4 Classification of defects
4.1 General <\/td>\n<\/tr>\n
13<\/td>\n4.2 Description of the defect classes
4.2.1 Examples of defects
4.2.2 Point defect
4.2.3 Micropipe
Table 1 \u2013 Classification of defects <\/td>\n<\/tr>\n
14<\/td>\n4.2.4 TSD
Figures
Figure 1 \u2013 Micropipe <\/td>\n<\/tr>\n
15<\/td>\n4.2.5 TED
Figure 2 \u2013 TSD <\/td>\n<\/tr>\n
16<\/td>\n4.2.6 BPD
Figure 3 \u2013 TED <\/td>\n<\/tr>\n
17<\/td>\n4.2.7 Scratch trace
Figure 4 \u2013 BPD <\/td>\n<\/tr>\n
18<\/td>\n4.2.8 Stacking fault
Figure 5 \u2013 Scratch trace <\/td>\n<\/tr>\n
19<\/td>\n4.2.9 Propagated stacking fault
Figure 6 \u2013 Stacking fault <\/td>\n<\/tr>\n
20<\/td>\n4.2.10 Stacking fault complex
Figure 7 \u2013 Propagated stacking fault <\/td>\n<\/tr>\n
21<\/td>\n4.2.11 Polytype inclusion
Figure 8 \u2013 Stacking fault complex <\/td>\n<\/tr>\n
22<\/td>\n4.2.12 Particle inclusion
Figure 9 \u2013 Polytype inclusion <\/td>\n<\/tr>\n
23<\/td>\n4.2.13 Bunched-step segment
Figure 10 \u2013 Particle inclusion <\/td>\n<\/tr>\n
24<\/td>\n4.2.14 Surface particle
4.2.15 Others
Figure 11 \u2013 Bunched-step segment <\/td>\n<\/tr>\n
25<\/td>\nBibliography <\/td>\n<\/tr>\n<\/table>\n","protected":false},"excerpt":{"rendered":"

Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices – Classification of defects<\/b><\/p>\n\n\n\n\n
Published By<\/td>\nPublication Date<\/td>\nNumber of Pages<\/td>\n<\/tr>\n
BSI<\/b><\/a><\/td>\n2019<\/td>\n26<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n","protected":false},"featured_media":233931,"template":"","meta":{"rank_math_lock_modified_date":false,"ep_exclude_from_search":false},"product_cat":[577,2641],"product_tag":[],"class_list":{"0":"post-233924","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-31-080-99","7":"product_cat-bsi","9":"first","10":"instock","11":"sold-individually","12":"shipping-taxable","13":"purchasable","14":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/pdfstandards.shop\/wp-json\/wp\/v2\/product\/233924","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/pdfstandards.shop\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/pdfstandards.shop\/wp-json\/wp\/v2\/types\/product"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/pdfstandards.shop\/wp-json\/wp\/v2\/media\/233931"}],"wp:attachment":[{"href":"https:\/\/pdfstandards.shop\/wp-json\/wp\/v2\/media?parent=233924"}],"wp:term":[{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/pdfstandards.shop\/wp-json\/wp\/v2\/product_cat?post=233924"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/pdfstandards.shop\/wp-json\/wp\/v2\/product_tag?post=233924"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}