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IEEE C62.35 2010

IEEE C62.35 2010

$54.71

IEEE Standard Test Methods for Avalanche Junction Semiconductor Surge-Protective Device Components

Published By Publication Date Number of Pages
IEEE 2010 26
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Revision Standard – Active. Avalanche breakdown diodes used for surge protection in systems with voltages equal to or less than 1000 V rms or 1200 V dc are discussed in this standard. The avalanche breakdown diode surge suppressor is a semiconductor diode which can operate in either the forward or reverse direction of its V-I characteristic. This component is a single package, which may be assembled from any combination of series and/or parallel diode chips.

PDF Catalog

PDF Pages PDF Title
1 IEEE Std C62.35™- 2010 Front cover
3 Title page
5 Introduction
Notice to users
Laws and regulations
Copyrights
Updating of IEEE documents
6 Errata
Interpretations
Patents
Participants
8 Contents
9 IMPORTANT NOTICE
1. Scope
2. Definitions
11 3. V-I Characteristics for a unidirectional ABD
12 4. Circuit symbols
5. Service conditions
5.1 Normal service conditions
5.1.1 Environmental conditions
5.1.2 Physical properties
13 5.1.3 System conditions
14 5.2 Unusual service conditions
5.2.1 Environmental conditions
5.2.2 Physical conditions
5.2.3 System conditions
15 6. Standard design test procedures
6.1 Standard design test criteria
6.2 Statistical procedures
6.3 Test conditions
6.4 Clamping voltage test (VC) (see Figure 3)
16 6.5 Rated peak impulse current (IPPM)
6.6 Rated standoff (working) voltage (VWM) (see Figure 4)
6.7 Stand-by current (ID) (See Figure 4)
17 7. Failures and fault modes
7.1 Degradation failure mode
7.1.1 High stand-by current fault mode
7.2 Catastrophic (cataleptic) failure
7.2.1 Short-circuit fault mode
7.2.2 Open-circuit fault mode
7.2.3 High clamping voltage fault mode
18 7.3 Critical failure
7.3.1 Fail-safe
8. Derived parameters and other test procedures.
8.1 Breakdown voltage (V(BR)) test (See Figure 5)
19 8.2 Rated peak impulse power (PPPM)
8.3 Rated average power dissipation (PM(AV))
8.4 Capacitance (C, CJ)
8.5 Insertion loss
8.5.1 General considerations
20 8.5.2 Measurement
8.6 Voltage overshoot (VOS) (See Figure 7)
21 8.7 Overshoot duration, TOS (see Figure 7)
8.8 Rated forward surge current (IFSM)
8.8.1 Rated forward surge current test method (See Figure 8)
22 8.9 Forward voltage (VF) (See Figure 8)
23 8.10 Temperature derating (See Figure 9)
8.10.1 Temperature derating test method (See Figure 3)
8.11 Temperature coefficient of breakdown voltage
8.11.1 The test Method of temperature coefficient of breakdown voltage, aV(BR) (see Figure 5)
25 Annex A (informative) Bibliography

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IEEE C62.35 2010
$54.71