🔥🔥 Don’t Miss Out on Our End of Autumn Sale. If you have any questions, feel free to click the bottom right corner to contact our customer service..

Concat us[email protected]
Shopping Cart

No products in the cart.

🔍
BSI 23/30451654 DC:2023 Edition

BSI 23/30451654 DC:2023 Edition

$13.70

BS EN IEC 60747-15. Semiconductor devices – Part 15. Isolated power semiconductor devices. Discrete devices

Published By Publication Date Number of Pages
BSI 2023 55
PDF Format Searchable Printable Preview Now
Guaranteed Safe Checkout
Category:

If you have any questions, feel free to reach out to our online customer service team by clicking on the bottom right corner. We’re here to assist you 24/7.
Email:[email protected]

PDF Catalog

PDF Pages PDF Title
7 FOREWORD
9 1 Scope
2 Normative references
10 3 Terms and definitions
11 4 Letter symbols
4.1 General
4.2 Additional subscripts/symbols
4.3 List letter symbols
4.3.1 Voltages and currents
4.3.2 Mechanical symbols
12 4.3.3 Other symbols
5 Essential ratings (limiting values) and characteristics
5.1 General
5.2 Ratings (limiting values)
5.2.1 Isolation voltage or Isolation test voltage (Visol)
5.2.2 Peak case non-rupture current (where appropriate)
5.2.3 Terminal current (ItRMS) (where appropriate),
5.2.4 Temperatures
5.2.4.1 Solder temperature (Tsold) (where appropriate)
5.2.4.2 Storage temperature (Tstg)
13 5.2.5 Mechanical ratings
5.2.5.1 Mounting torque of screws to heat sink (Ms)
5.2.5.2 Mounting torque of screws to terminals (Mt)
5.2.5.3 Mounting force (F)
5.2.5.4 Terminal pull-out force (Ft)
5.2.5.5 Acceleration (a)
5.2.5.6 Flatness of the heatsink surface (eS) (where appropriate)
5.2.5.7 Roughness of the heatsink surface (RZS) (where appropriate)
5.2.6 Climatic ratings (where appropriate)
5.3 Characteristics
5.3.1 Mechanical characteristics
5.3.1.1 Creepage distance along surface (ds)
14 5.3.1.2 Clearance distance in air (da)
5.3.1.3 Mass (m) of the device
5.3.1.4 Flatness of the base plate (ec) (where appropriate)
5.3.2 Parasitic inductance (Lp)
5.3.3 Parasitic capacitances (Cp)
5.3.4 Partial discharge inception voltage (ViM or Vi(RMS)) (where appropriate)
5.3.5 Partial discharge extinction voltage (VeM or Ve(RMS)) (where appropriate)
5.3.6 Thermal resistances
5.3.6.1 Thermal resistance junction to case for case rated devices (Rth(j-c)X)
5.3.6.2 Thermal resistance case to heat sink (Rth(c-s)) (where appropriate)
5.3.6.3 Thermal resistance case to heat sink per switch (Rth(c-s)X) (where appropriate)
15 5.3.6.4 Thermal resistance junction to heat sink for heat sink rated devices (Rth(j-s)X)
5.3.6.5 Thermal resistance junction to sensor (Rth(j-r)) (where appropriate)
5.3.7 Transient thermal impedance (Zth)
6 Measurement methods
6.1 Verification of isolation voltage rating
6.1.1 Verification of isolation voltage rating between terminals and base plate (Visol)
16 6.1.2 Verification of isolation voltage rating between temperature sensor and terminals (Visol1)
17 6.2 Methods of measurement
6.2.1 Partial discharge inception and extinction voltages (Vi) (Ve)
6.2.2 Parasitic inductance (Lp)
19 6.2.3 Parasitic capacitance terminal to case (Cp)
20 6.2.4 Thermal characteristics
6.2.4.1 General description of measuring methods
21 6.2.4.2 Thermal resistance junction to case per switch (X) Rth(j-c)X
22 6.2.4.3 Thermal resistance case to heat sink per switch (X) Rth(c-s)X or per device Rth(c-s)
6.2.4.4 Thermal resistance junction to heat sink per switch (X) Rth(j-s)X (for heat sink rated devices)
6.2.4.5 Transient thermal impedance Zth
23 7 Acceptance and reliability
7.1 General requirements
7.2 List of endurance tests
7.3 Acceptance defining criteria
7.4 Type tests and routine tests
7.4.1 Type tests
24 7.4.2 Routine tests
25 Annex A (informative) Test method of peak case non-rupture current0F
28 Annex B (informative) Measuring method of the thickness of thermal compound paste
29 Annex C (informative) Intelligent power semiconductor modules (IPM)
C.1 General
C.2 Control terminals of IPM
30 C.3 Essential ratings (limiting value) and characteristics
C.3.1 General
C.3.2 Ratings (limiting value) and testing method
C.3.2.1 Supply voltage VD / VCC
C.3.2.2 Input voltage VCIN / Input signal voltage Vin
C.3.2.3 Fault output voltage VFO / Alarm signal voltage VALM
31 C.3.2.4 Fault output current IFO / Alarm signal current IALM
33 C.3.2.5 Main circuit DC bus voltage at short circuit VSC
35 C.3.2.6 Acceptance defining criteria
36 C.3.3 Characteristics and measuring method
C.3.3.1 Turn-off times and turn-off switching energy at inductive load
38 C.3.3.2 Turn-on times and turn-on switching energy at inductive load
39 C.3.3.3 Control circuit current of upper arm ID / ICCP, and control circuit current of lower arm ID / ICCN
41 C.3.3.4 Input ON threshold voltage Vth(on) / Vinth(on), and input OFF threshold voltage Vth(off) / Vinth(off)
42 C.3.3.5 Over current protection level IOC / Short circuit trip level SC
44 C.3.3.6 Over current protection delay time tdoc / Short circuit current delay time toff(SC)
46 C.3.3.7 Over temperature protection OT / overheating protection temperature level TjOH, and over temperature protection hysteresis OT(hys) / overheating protection hysteresis TjH
49 C.3.3.8 Control circuit under-voltage protection UV / Under-voltage protection level VUV, control circuit under-voltage protection reset level UVr / Under-voltage protection hysteresis VH, and fault output pulse width tFO / alarm signal hold time tALM
50 C.3.3.9 Fault output current IFO(H) (during unprotection), IFO(L) (during protection), and alarm signal current limiting resistance value RALM
52 C.3.3.10 Common mode noise withstand capability
55 Bibliography

Related products

BSI 23/30451654 DC
$13.70