BSI 20/30406234 DC 2020
$13.70
BS IEC 63275-2 Ed.1.0. Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors – Part 2. Test method for bipolar degradation by body diode operating
| Published By | Publication Date | Number of Pages |
| BSI | 2020 | 11 |
| Status | Definitive |
|---|---|
| Pages | 11 |
| Publication Date | 2020-04-01 |
| Standard Number | 20/30406234 DC |
| Title | BS IEC 63275-2 Ed.1.0. Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors – Part 2. Test method for bipolar degradation by body diode operating |
| Identical National Standard Of | 47/2623/CD, prEN IEC 63275-2:2021 |
| Descriptors | Electronic equipment and components, Semiconductor devices, Semiconductors, Metal oxide semiconductors, Testing methods |
| Publisher | BSI |
| Committee | EPL/47 |
| ICS Codes | 31.080.01 - Semiconductor devices in general |
