BS ISO 12406:2010
$142.49
Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth profiling of arsenic in silicon
| Published By | Publication Date | Number of Pages |
| BSI | 2010 | 24 |
This International Standard specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of arsenic in silicon, and using stylus profilometry or optical interferometry for depth calibration. This method is applicable to single-crystal, poly-crystal or amorphous silicon specimens with arsenic atomic concentrations between 1 × 1016 atoms/cm3 and 2,5 × 1021 atoms/cm3, and to crater depths of 50 nm or deeper.
