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BS IEC 63068-4:2022

BS IEC 63068-4:2022

$142.49

Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices – Procedure for identifying and evaluating defects using a combined method of optical inspection and photoluminescence

Published By Publication Date Number of Pages
BSI 2022 28
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PDF Catalog

PDF Pages PDF Title
2 undefined
4 CONTENTS
6 FOREWORD
8 INTRODUCTION
9 1 Scope
2 Normative references
3 Terms and definitions
4 Principle
10 5 Requirements
5.1 General
Table 1 – Combination table for identifying defects
11 5.2 Parameter settings
5.2.1 General
12 5.2.2 Parameter setting process
5.3 Procedure
5.4 Image evaluation
5.4.1 General
5.4.2 Mean width of planar and volume defects
13 5.4.3 Evaluation process
5.5 Precision
5.6 Test report
5.6.1 Mandatory elements
14 5.6.2 Optional elements
15 Annex A (informative)Optical inspection and photoluminescence images of defects
A.1 General
A.2 Micropipe
16 A.3 TSD
Figures
Figure A.1 – Micropipe
17 A.4 TED
Figure A.2 – TSD
18 A.5 BPD
Figure A.3 – TED
19 A.6 Scratch trace
Figure A.4 – BPD
20 A.7 Stacking fault
Figure A.5 – Scratch trace
21 A.8 Propagated stacking fault
Figure A.6 – Stacking fault
22 A.9 Stacking fault complex
Figure A.7 – Propagated stacking fault
23 A.10 Polytype inclusion
Figure A.8 – Stacking fault complex
24 A.11 Particle inclusion
Figure A.9 – Polytype inclusion
25 A.12 Bunched-step segment
Figure A.10 – Particle inclusion
26 Figure A.11 – Bunched-step segment
27 A.13 Surface particle
Figure A.12 – Surface particle

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BS IEC 63068-4:2022
$142.49