{"id":415697,"date":"2024-10-20T06:06:40","date_gmt":"2024-10-20T06:06:40","guid":{"rendered":"https:\/\/pdfstandards.shop\/product\/uncategorized\/bs-iec-632842022\/"},"modified":"2024-10-26T11:21:38","modified_gmt":"2024-10-26T11:21:38","slug":"bs-iec-632842022","status":"publish","type":"product","link":"https:\/\/pdfstandards.shop\/product\/publishers\/bsi\/bs-iec-632842022\/","title":{"rendered":"BS IEC 63284:2022"},"content":{"rendered":"
PDF Pages<\/th>\n | PDF Title<\/th>\n<\/tr>\n | ||||||
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2<\/td>\n | undefined <\/td>\n<\/tr>\n | ||||||
3<\/td>\n | English CONTENTS <\/td>\n<\/tr>\n | ||||||
4<\/td>\n | FOREWORD <\/td>\n<\/tr>\n | ||||||
6<\/td>\n | INTRODUCTION <\/td>\n<\/tr>\n | ||||||
7<\/td>\n | 1 Scope 2 Normative references 3 Terms and definitions <\/td>\n<\/tr>\n | ||||||
8<\/td>\n | 4 Objectives 5 Applicable GaN transistors 6 Dynamic high temperature operating life test 6.1 Test sample 6.2 Test circuit 6.2.1 Scheme of a hard switching circuit 6.2.2 Electrical parameters Figure 1 \u2013 Test circuit <\/td>\n<\/tr>\n | ||||||
9<\/td>\n | 6.2.3 Diode 6.2.4 Gate driver 6.2.5 Inductance and resistance <\/td>\n<\/tr>\n | ||||||
10<\/td>\n | 6.3 Test condition 6.3.1 General Figure 2 \u2013 Wave forms of switching Figure 3 \u2013 Switching locus at hard switching <\/td>\n<\/tr>\n | ||||||
11<\/td>\n | 6.3.2 Electrical stress 6.3.3 Thermal stress 6.4 Test procedure 6.4.1 Flow chart <\/td>\n<\/tr>\n | ||||||
12<\/td>\n | 6.4.2 Initial measurement 6.4.3 Intermediate measurement Figure 4 \u2013 Test flow chart <\/td>\n<\/tr>\n | ||||||
13<\/td>\n | 6.5 Failure criteria 6.6 Failure mechanism 6.7 Acceleration parameters 6.8 Number of samples 6.9 Test report <\/td>\n<\/tr>\n | ||||||
14<\/td>\n | Bibliography <\/td>\n<\/tr>\n<\/table>\n","protected":false},"excerpt":{"rendered":" Semiconductor devices. Reliability test method by inductive load switching for gallium nitride transistors<\/b><\/p>\n |