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BS EN 60747-15:2012

BS EN 60747-15:2012

$142.49

Semiconductor devices. Discrete devices – Isolated power semiconductor devices

Published By Publication Date Number of Pages
BSI 2012 30
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IEC 60747-15:2010 gives the requirements for isolated power semiconductor devices excluding devices with incorporated control circuits. These requirements are additional to those given in other parts of IEC 60747 for the corresponding non-isolated power devices. The main changes with respect to previous edition are listed below. a) Clause 3, 4 and 5 were re-edited and some of them were combined to other sub clauses. b) Clause 6, 7 were re-edited as a part of “Measuring methods” with amendment of suitable addition and deletion. c) Clause 8 was amended by suitable addition and deletion. d) Annex C, D and Bibliography were deleted. This publication is to be read in conjunction with /2.

PDF Catalog

PDF Pages PDF Title
7 English
CONTENTS
9 1 Scope
2 Normative references
10 3 Terms and definitions
11 4 Letter symbols
4.1 General
4.2 Additional subscripts/symbols
4.3 List letter symbols
12 5 Essential ratings (limiting values) and characteristics
5.1 General
5.2 Ratings (limiting values)
13 5.3 Characteristics
15 6 Measurement methods
6.1 Verification of isolation voltage rating between terminals and base plate (Visol)
Figures
Figure 1 – Basic circuit diagram for isolation breakdown withstandvoltage test (“high pot test”) with Visol
16 6.2 Methods of measurement
17 Figure 2 – Circuit diagram for measurement of parasitic inductances (Lp)
18 Figure 3 – Wave forms
19 Figure 4 – Circuit diagram for measurement of parasitic capacitance (Cp)
20 Figure 5 – Cross-section of an isolated power devicewith reference points for temperature measurement of Tc and Ts
21 7 Acceptance and reliability
7.1 General requirements
22 7.2 List of endurance tests
7.3 Acceptance defining criteria
7.4 Type tests and routine tests
Tables
Table 1 – Endurance tests
Table 2 – Acceptance defining characteristics for endurance and reliability tests
23 Table 3 – Minimum type and routine tests for isolated power semiconductor devices
24 Annex A (informative) Test method of peak case non-rupture current
Figure A.1 – Circuit diagram for test of peak case non-rupture current ICNR
27 Annex B (informative) Measuring method of the thickness of thermal compound paste
Figure B.1 – Example of a measuring gauge for a layer of thermal compound paste of a thickness between 5 um and 150 um
28 Bibliography

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BS EN 60747-15:2012
$142.49