BS 6493-1.5:1992:2003 Edition
$215.11
Semiconductor devices. Discrete devices – Recommendations for optoelectronic devices – Section 5: Recommendations for optoelectronic devices
| Published By | Publication Date | Number of Pages |
| BSI | 2003 | 136 |
This standard applies to the following categories or sub-categories of devices:
- Semiconductor photoemitters, including:
- light-emitting diodes (LEDs);
- infrared-emitting diodes (IREDs);
- laser diodes and laser-diode modules;
- optoelectronic displays (under consideration).
- Semiconductor photoelectric detectors, including:
- photodiodes;
- phototransistors.
- Semiconductor photosensitive devices, including:
- photoresistors, photoconductive cells;
- photothyristors (under consideration).
- Semiconductor devices utilizing optical radiation for internal operation, including:
- photocouplers, optocouplers.
The sequence of the different chapters is in accordance with Publication 747-1, Chapter III, subclause 2.1.
Relevant terminology and letter symbols, essential ratings and characteristics and measuring methods.
PDF Catalog
| PDF Pages | PDF Title |
|---|---|
| 1 | BRITISH STANDARD |
| 2 | Committees responsible for this British Standard |
| 3 | Contents |
| 7 | General 1 Introductory note 2 Scope |
| 9 | Chapter II Terminology and letter symbols 1 Physical concepts 1.1 (Electromagnetic) radiation 1.2 Optical radiation 1.3 Visible radiation 1.4 Infrared radiation 1.5 Ultraviolet radiation 1.6 Light 1.7 Photoelectric effect 1.8 Liquid crystal display devices |
| 11 | 2 Type of devices 2.1 Semiconductor optoelectronic device 2.2 Semiconductor photoemitter 2.3 Semiconductor optoelectronic display 2.4 Semiconductor laser 2.5 Light-emitting diode (LED) |
| 12 | 2.6 Infrared-emitting diode (IRED) 2.7 (Semiconductor) photosensitive device 2.8 (Semiconductor) photoelectric detector 2.9 (Semiconductor) photoresistor, photoconductive cell 2.10 Photoelement, photovoltaic cell 2.11 Photodiode 2.12 Avalanche photodiode 2.13 Phototransistor 2.14 Photothyristor 2.15 Photocoupler, optocoupler 3 General terms 3.1 Optical axis 3.2 Optical port (of a semiconductor optoelectronic device) |
| 16 | 3.3 (Optical) cladding 3.4 Liquid crystal display devices |
| 17 | 4 Terms related to ratings and characteristics 4.1 General |
| 18 | Figure 4 – Switching times 4.2 Photoemitters |
| 20 | Figure 5 – Threshold current of a laser diode |
| 21 | Figure 6 – Radiation diagram and related characteristics Figure 7 – Spectral characteristics of light-emitting diodes and infrared-emitting diodes |
| 22 | Figure 8 – Spectral characteristics of laser diodes and laser-diode modules |
| 23 | Figure 9 – Side-mode suppression ratio |
| 24 | Figure 10 – Emission source of a laser diode 4.2 Photosensitive devices |
| 25 | Figure 11 – Fibre-input sensitivity |
| 26 | Figure 12 – Sensitivity diagram and related characteristics |
| 27 | Figure 13 – Multiplication factor of an avalanche diode 4.4 Photocouplers, optocouplers |
| 28 | 4.5 Liquid crystal display devices 5 Letter symbols |
| 29 | Chapter III Essential ratings and characteristics Section 1. Light-emitting diodes 1 Type 2 Semiconductor material 3 Colour 4 Details of outline and encapsulation 5 Limiting values (absolute maximum system) over the operating temperature range, |
| 30 | 6 Electrical characteristics 7 Supplementary information |
| 31 | Section 2. Infrared-emitting diodes 1 Type 2 Semiconductor material 3 Details of outline and encapsulation 4 Limiting values (absolute maximum system) over the operating temperature range, 5 Electrical characteristics |
| 32 | 6 Supplementary information |
| 33 | Section 3. Photodiodes 1 Type 2 Semiconductor material 3 Details of outline and encapsulation 4 Limiting values (absolute maximum system) over the operating temperature range, 5 Electrical characteristics |
| 34 | 6 Supplementary information |
| 35 | Section 4. Phototransistors 1 Type 2 Semiconductor material 3 Polarity 4 Details of outline and encapsulation 5 Limiting values (absolute maximum system) over the operating temperature range, |
| 36 | 6 Electrical characteristics 7 Supplementary information |
| 37 | Section 5. Photocouplers, optocouplers 1 Type 2 Semiconductor material 3 Polarity of the output resistor 4 Details of outline and encapsulation 5 Limiting values (absolute maximum system) over the operating temperature range, 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 5.10 Where appropriate, maximum surge isolation voltage ( |
| 38 | Figure 14 – Test voltage 5.11 5.12 5.13 5.14 5.15 |
| 39 | 6 Electrical characteristics 7 Supplementary information |
| 41 | Section 6. Laser diodes 1 Type 2 Semiconductor 2.1 Material 2.2 Structure 3 Details of outline and encapsulation 3.1 3.2 3.3 3.4 3.5 4 Limiting values (absolute maximum system) over the operating temperature range, 4.1 4.2 4.3 4.4 4.5 4.6 4.7 5 Electrical and optical characteristics |
| 43 | 6 Supplementary information 6.1 6.2 6.3 6.4 |
| 45 | Section 7. Light-emitting diodes and infrared emitting diodes for fibre optic systems or subsystems 1 Type 2 Semiconductor material 3 Details of outline and encapsulation 3.1 3.2 3.3 3.4 3.5 3.6 4 Limiting values (absolute maximum system) over the operating temperature range, |
| 46 | 5 Electrical and optical characteristics 6 Supplementary information |
| 49 | Section 8. Laser module with pigtails 1 Type 2 Semiconductor 2.1 Material 2.2 Structure 3 Details of outline and encapsulation 4 Limiting values (absolute maximum system) over the operating temperature range, |
| 51 | 5 Electric and optical characteristics |
| 53 | Section 9. Pin photodiodes for fibre optic systems or subsystems 1 Type 2 Semiconductor material 3 Details of outline and encapsulation 4 Limiting values (absolute maximum system) over the operating temperature range, |
| 54 | 5 Electrical and optical characteristics 6 Supplementary information |
| 55 | Section 10. Avalanche photodiodes (APDs) with or without pigtails 1 Type 2 Semiconductor 2.1 Material 2.2 Structure. 3 Details of outline and encapsulation 4 Limiting values (absolute maximum system) over the operating temperature range, |
| 56 | 5 Electrical and optical characteristics 6 Supplementary information |
| 57 | Section 11. Visual inspection of monochrome matrix liquid crystal display modules 1 General 2 Visual inspection of displays 2.1 Display not activated |
| 58 | 2.2 Display activated |
| 59 | Figure 63 – Defects within the viewing area Figure 64 – Deviations and misshapes of a square picture element |
| 60 | Figure 65 – Notched edges of picture elements Figure 66 – Defects within picture elements and their surroundings |
| 61 | Section 12. Liquid crystal display cells (LCD cells) 1 Type 2 Principle and material used 3 Modes of operation 3.1 Optical mode of operation 3.2 Electrical mode of operation 4 Details of outline 5 Limiting values (absolute maximum system) over the operating temperature range, |
| 62 | 6 Electrical and optical characteristics 7 Supplementary information |
| 63 | Section X. Visual inspection of monochrome liquid crystal display cells 1 Scope 2 General 3 Visual inspection of displays |
| 65 | 4 Seal inspections 5 Visual inspection of contact pad area 6 Visual inspection for chipped material at the borders and edges of the support plates of cells 6.1 Procedure |
| 66 | Figure 1 – Defects within the viewing area Figure 2 – Defects within the sealing area Figure 3 – Defects of contact pad area |
| 67 | Figure 4 – Damage of a corner and of an edge Figure 5 – Deviations of dimensions and shape e1…e4: deviations Figure 6 – Defects within segments |
| 69 | Chapter IV. Measuring methods 1 Measuring methods for photoemitters 1.1 Luminous intensity of light-emitting diodes |
| 70 | 1.2 Radiant intensity of infrared-emitting diodes |
| 71 | 1.3 Radiant power or forward current of light-emitting diodes (LED), infrared-emitting diodes (IRED) … |
| 72 | 1.4 Peak-emission wavelength Figure 18 – Basic circuit |
| 73 | Figure 19 – Radiant power as function of wavelength |
| 74 | 1.5 Switching times of infrared-emitting diode and light-emitting diode with or without pigtails |
| 76 | 1.6 Small signal cut-off frequency ( |
| 77 | 1.7 Threshold current of laser diodes with or without pigtails |
| 78 | 1.8 Relative intensity noise of light-emitting diodes (LED), infrared-emitting diodes (IRED) and lase… |
| 80 | 1.9 Emission source length and width and astigmatism of a laser diode without pigtail |
| 81 | 1.10 Switching times of a laser diode with or without pigtails |
| 83 | 1.11 Half-intensity angle and misalignment angle of a photoemitter |
| 85 | 1.12 Carrier to noise ratio of light-emitting diodes, infrared-emitting diodes, laser diodes and a las… |
| 86 | 1.13 |
| 88 | 1.14 Tracking error for a laser module with pigtails, with or without cooler Figure 35a – Laser diode: cathode connected to the package Figure 35b – Laser diode: anode connected to the package |
| 89 | 1.15 Spectral linewidth of a laser diode with or without pigtails |
| 91 | 1.16 Modulation current at 1 dB efficacy compression |
| 92 | 1.17 Two-tone intermodulation distortion (D |
| 95 | 1.18 Central wavelength |
| 97 | 2 Measuring methods for photosensitive devices 2.1 Reverse current under optical radiation of photodiodes including devices with or without pigtails Figure 40a – Phototransistor Figure 40b – Photodiode |
| 99 | 2.2 Dark current for photodiodes |
| 100 | 2.3 Collector-emitter saturation voltage |
| 101 | 2.4 Noise of a PIN photodiode |
| 102 | 2.5 Excess noise factor of an avalanche photodiode with or without pigtails |
| 104 | 2.6 Small-signal cut-off frequency of a photodiode with or without pigtails |
| 105 | 2.7 Multiplication factor of an avalanche photodiode (APD) with or without pigtails |
| 106 | 2.8 Switching times of a PIN photodiode or an avalanche photodiode (APD) with or without pigtails |
| 109 | 2.9 Responsivity of a PIN-FET module |
| 110 | 2.10 Frequency response flatness |
| 111 | 2.11 Output noise power (spectral) density |
| 112 | 2.12 Low frequency output noise power (spectral) density |
| 114 | 2.13 Minimum detectable power of PIN-FET module |
| 116 | 3 Measuring methods for photocouplers 3.1 Current transfer ratio Figure 51 – Basic circuit |
| 117 | 3.2 Input-to-output capacitance Figure 52 – Basic circuit |
| 118 | 3.3 Isolation resistance between input and output Figure 53 – Basic circuit |
| 119 | 3.4 Isolation test 3.5 Partial discharges of photocouplers |
| 120 | Figure 55 – Partial discharge test circuit |
| 121 | Figure 56 – Connections for the calibration of the complete test arrangement |
| 124 | 3.6 Collector-emitter saturation voltage |
| 126 | 3.7 Switching times |
| 128 | 4 Measuring methods for liquid crystal display devices 4.1 General 4.2 Contrast ratios |
| 129 | Figure 81 – Example of system for measuring diffused light contrast ratio Figure 82 – Schematic of an apparatus for direct beam contrast ratio measurement |
| 131 | 4.3 Switching times Figure 83 – Typical examples of dynamic responses of two different LCDs |
| 132 | 4.4 Current Figure 84 – Schematic for the measurement of a current in an LCD cell |
| 133 | 4.5 Transmittance and reflectance Figure 85 – Block diagram for the measurement of the supply currents |
| 134 | 4.6 Threshold and saturation voltages |
| 135 | Figure 86 – Typical examples of voltage responses of two different LCDs |
